k i semiconductor applications t he h 733 is designed for driver stage of af amplifier a nd low speed switching . absolute maximum ratings a =25 electrical characteristics a =25 symbol characteristics min typ max unit test cond itions bv cbo collector - base breakdown voltage - 6 0 v i c = - 1 0 0 a, i e =0 bv ceo collector - emitter breakdown voltage - 5 0 v i c = - 10 m a, i b =0 bv ebo emitter - base breakdown voltage - 5 v i e = - 1 0 a i c =0 h fe dc current gain 90 6 0 0 v ce = - 6 v, i c = - 1 m a v ce(sat) c ollector - emitter saturation voltage - 0. 3 v i c = - 100m a, i b = - 10 ma v be(on) base - emitter on voltage - 0.5 - 0.8 v v ce = - 6v, i c = - 1m a i cbo collector cut - off current - 100 na v cb = - 60v, i e =0 i ebo emitter cut - off current - 100 na v eb = - 5v, i c =0 f t current gai n - bandwidth product 180 mhz v ce = - 6v, i c = - 10m a cob output capacitance 4.5 pf v cb = - 10v, i e =0 f=1 mhz fe classification r q p k 9 0 18 0 135 2 7 0 2 0 0 40 0 30 0 6 0 0 t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation 2 5 0mw v cbo collector - base voltage - 6 0v v ceo collector - emitter voltage - 5 0 v v ebo emitter - base voltage - 5 v i c collector current - 150m a 1 D emitter e 2 D base b 3 D collector c to - 92 a 733 p n p s i l i c o n t r a n s i s t o r
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